Pressureless Sintered Silicon Carbide (SSiC)
Sintered from high purity ultra-fine silicon carbide powder (sub-micron) in a vacuum furnace at the temperature of 2100°C – 2200°C. Direct Sintered SiC is better grade than Reaction Bonded SiC, and is commonly specified for high temperature work and hard faced seal components.
Fineway custom manufactures mechanical seal rings, shafts and bushes/sleeves in SSiC, RBSiC, Tungsten Carbide and Carbon
Property | Units | Value |
Composition | SSiC | |
Density | g/cm3 | 3.1-3.2 |
Vickers hardness | HV0.5 | 2500 |
Purity (SiC Percentage) | % | 99 |
Porosity | % | <0.2 |
Fracture Toughness | MPa·m1/2 | 4 |
Compressive Strength | MPa | 3000 |
Flexural Strength | MPa | 400 |
Young’s Modulus of Elasticity | GPa | 410 |
Poisson’s Ratio ν | 0.15 | |
Thermal Conductivity | W/m.k | 100-120 |
Thermal Expansion Coefficient | i/°C | 4*10^-6 |
Maximum Use Temperature | °C | 1600 |