Pressureless Sintered Silicon Carbide (SSiC)

Sintered from high purity ultra-fine silicon carbide powder (sub-micron) in a vacuum furnace at the temperature of 2100°C – 2200°C. Direct Sintered SiC is better grade than Reaction Bonded SiC, and is commonly specified for high temperature work and hard faced seal components.

Fineway custom manufactures mechanical seal rings, shafts and bushes/sleeves in SSiC,  RBSiC, Tungsten Carbide and Carbon

Property Units Value
Composition SSiC
Density g/cm3 3.1-3.2
Vickers hardness HV0.5 2500
Purity (SiC Percentage) % 99
Porosity % <0.2
Fracture Toughness MPa·m1/2 4
Compressive Strength MPa 3000
Flexural Strength MPa 400
Young’s Modulus of Elasticity GPa 410
Poissons Ratio ν 0.15
Thermal Conductivity W/m.k 100-120
Thermal Expansion Coefficient i/°C 4*10^-6
Maximum Use Temperature °C 1600