Reaction Bonded Silicon Carbide (RBSiC/ SiSiC)
is sintered with high purity micron silicon carbide and graphite under a vacuum condition at 1600 °C. The content of free silicon is under 12%.
| Property | Unit | Data |
| Composition | RBSiC / SiSiC | |
| Density | g/cm3 | ＞ 3.02 |
| Vickers hardness | HV0.5 | 2100 |
| Purity (SiC Percentage) | % | 90 |
| Porosity | % | ＜0.1 |
| Bending Strength | MPa | ＞250 (20°C） |
| ＞280 （1200°C） | ||
| Young’s Modulus of Elasticity | GPa | 332 (20°C） |
| 300（1200°C） | ||
| Thermal Conductivity | W/m.k | 45（1200°C） |
| Thermal Expansion Coefficient | i/°C | 4.5*10^-6 |
| Maximum Use Temperature | °C | 1380 |
Reaction Bonded Silicon carbide has outstanding wear and thermal shock resistance, it is ideal for extreme environments，including sliding abrasion, high service temperatures, high pressure and severe chemical atmosphere.
- Pipe Liners
- Flow Control Chokes
- Centrifuge Components
- Combustors/Burners
- Kiln Furniture
- Spray Nozzles