Reaction Bonded Silicon Carbide (RBSiC/ SiSiC)

is sintered with high purity micron silicon carbide and graphite under a vacuum condition at 1600 °C. The content of free silicon is under 12%.

Property Unit Data
Composition RBSiC / SiSiC
Density g/cm3 > 3.02
Vickers hardness HV0.5 2100
Purity (SiC Percentage) % 98
Porosity % <0.1
Bending Strength MPa >250 (20°C)
>280 (1200°C)
Young’s Modulus of Elasticity GPa 332 (20°C)
300(1200°C)
Thermal Conductivity W/m.k 45(1200°C)
Thermal Expansion Coefficient i/°C 4.5*10^-6
Maximum Use Temperature °C 1380